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Wisdom Technologies Int'l
SFP70N06
N-Channel MOSFET
Features

Low RDS(on) (0.015 )@VGS=10V Low Gate Charge (Typical 65nC) Low Crss (Typical 150pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175C)
Symbol
2. Drain
1. Gate

3. Source
General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
TO-220
12
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25C) Continuous Drain Current(@TC = 100C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 3) (Note 1)
Parameter
Value
60 70 51 280 25 800 7.0 158 1.05 - 55 ~ 175 300
Units
V A A A V mJ V/ns W W/C C C
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
0.95 62.5
Units
C/W C/W C/W
June, 2004. Rev. 0.
Copyright@Wisdom Technologies International, All rights reserved.
1/7
SFP70N06
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Zero Gate Voltage Drain Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 C VDS = 60V, VGS = 0V VDS = 48V, TC = 150 C VGS = 25V, VDS = 0V VGS = -25V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 35A 60 0.06 1 10 100 -100 V V/C uA uA nA nA ( TC = 25 C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.013 4.0 0.015 V
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 2200 650 150 2900 850 195 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =48V, VGS =10V, ID =70A see fig. 12.
(Note 4, 5)
VDD =30V, ID =35A, RG =50 see fig. 13.
(Note 4, 5)
30 60 125 95 65 17 23
70 130 260 200 85 nC ns
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr NOTES
1. Repeativity rating : pulse width limited by junction temperature 2. L = 250 uH, IAS = 70A, VDD = 25V, RG = 0 , Starting TJ = 25C 3. ISD 70A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature.
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =70A, VGS =0V IS=70A,VGS=0V,dIF/dt=100A/us
Min.
-
Typ.
62 110
Max.
70 280 1.5 -
Unit.
A V ns nC
2/7
Copyright@Wisdom Technologies International, All rights reserved.
SFP70N06
Fig 1. On-State Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Fig 2. Transfer Characteristics
10
2
10
2
ID, Drain Current [A]
ID, Drain Current [A]
175 C
10
1
o
10
1
25 C -55 C
o
o
Notes : 1. 250 s Pulse Test 2. TC = 25
Notes : 1. VDS = 25V 2. 250 s Pulse Test
10 -1 10
0
10
0
10
1
10
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
30
Fig 4. On State Current vs. Allowable Case Temperature
RDS(ON), Drain-Source On-Resistance [m ]
20
VGS = 10V
15
VGS = 20V
IDR, Reverse Drain Current [A]
25
10
2
10
1
10
175 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
5
Note : TJ = 25
0
0
50
100
150
200
250
300
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
5500 5000 4500 4000
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Fig 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
10
VDS = 30V VDS = 48V
Capacitance [pF]
3500 3000 2500 2000 1500 1000 500 0 0 5
Notes : 1. VGS = 0V 2. f=1MHz
8
Ciss
6
4
Coss
2
Note : ID = 70.0 A
Crss
10 15 20 25 30 35
0 0 10 20 30 40 50
60
70
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3/7
Copyright@Wisdom Technologies International, All rights reserved.
SFP70N06
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
1.2
3.0
Fig 8. On-Resistance Variation vs. Junction Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 35 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig 9. Maximum Safe Operating Area
10
3
Fig 10. Maximum Drain Current vs. Case Temperature
70
Operation in This Area is Limited by R DS(on)
60
ID, Drain Current [A]
100 s
10
2
1 ms 10 ms DC
ID' Drain Current [A]
50 40 30 20 10 0 25
10
1
Notes :
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
o
10 -1 10
0
10
0
10
1
10
2
50
75
100
125
o
150
175
VDS, Drain-Source Voltage [V]
TC' Case Temperature [ C]
Fig 11. Transient Thermal Response Curve
10
0
Z JC Thermal Response (t),
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z J C t) = 0 .9 5 /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
4/7
Copyright@Wisdom Technologies International, All rights reserved.
SFP70N06
Fig. 12. Gate Charge Test Circuit & Waveforms
5K 0 1V 2 20F 0n 30F 0n
Sm Tp a e ye a DT sU VS D
VS G 1V 0 Q g s Q g
VS G
Q g d
DT U
1A m
Cag hr e
Fig 13. Switching Time Test Circuit & Waveforms
V D S
R L V D D
( . rt dD 0 a V) 5e S
V D S
9 0 %
1 0 V R G Pe u l s G rtr ea no e
D U T
V i n
1 0 %
t(n d) o
t r tn o
t(f) df o tf o f
t f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
V D S ID R G
L V D D
BDS V S 1 -- LA2 ---------E =-- LI S ---------A S 2 BDS -V V-D S D BDS V S IS A I () Dt
1V 0
DT U
V D D
tp
V () Dt S Te i m
5/7
Copyright@Wisdom Technologies International, All rights reserved.
SFP70N06
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
IS
L
Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
6/7
Copyright@Wisdom Technologies International, All rights reserved.
SFP70N06
TO-220 Package Dimension
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
mm Typ.
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Inch Typ.
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
O
E B
A
H
I
F
C M
G 1 D 2 3
L
1. Gate 2. Drain 3. Source
N O
J K
7/7
Copyright@Wisdom Technologies International, All rights reserved.

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